APPARATUS, METHOD, AND COMPOSITION FOR FAR EDGE WAFER CLEANING

摘要

A wafer cleaning apparatus includes a polishing unit which is used in a chemical mechanical polishing (CMP) of a wafer, and a cleaning defensing unit which sprays a cleaning solution to the end part of a wafer edge after the CMP of the wafer. A wafer cleaning method includes a CMP of a wafer by a polishing unit, and a step of spraying a cleaning solution to the end part of a wafer edge by a cleaning defensing unit after the CMP of the wafer. Another method includes a CMP, a step of spraying deionized water, and a step of spraying a pH regulator having a pH range of about 2 to 13.