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SEMI-CONDUCTOR SUBSTRATE AND METHOD AND MASKING LAYER FOR PRODUCING A FREE-STANDING SEMI-CONDUCTOR SUBSTRATE BY MEANS OF HYDRIDE-GAS PHASE EPITAXY
SEMI-CONDUCTOR SUBSTRATE AND METHOD AND MASKING LAYER FOR PRODUCING A FREE-STANDING SEMI-CONDUCTOR SUBSTRATE BY MEANS OF HYDRIDE-GAS PHASE EPITAXY
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机译:用氢化物-气相色谱法生产游离的半导体基体的半导体基体和方法以及制备层
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摘要
Applied to an output layer (1) to produce an epitaxy isolated semiconductor substrate (6), a masking layer (2) with many holes is subjected by a semiconductor material to lateral overgrowth. The output layer, the masking layer and the semiconductor substrate are cooled down. Material for forming the masking layer partly consists of tungsten silicide/silicide nitride. Independent claims are also included for: (a) an isolated semiconductor substrate for producing electronic or opto-electronic components; (b) a masking layer of tungsten silicide/silicide nitride for producing an isolated semiconductor substrate on an output substrate.
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