SiC device with high reverse voltage, completed by a flattening edge termination

摘要

The present invention relates to a silicon carbide (SiC) semiconductor device having both a high reverse voltage and a low on-resistance. According to one embodiment, the semiconductor device has a reverse voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milliohm-square centimeters (mΩ · cm 2), and more preferably less than 5 mΩ · cm 2. According to another embodiment, the semiconductor device has a reverse voltage of at least 15 kV and an on-resistance of less than 15 mΩ · cm 2, and more preferably less than 7 mΩ · cm 2. According to another embodiment, the semiconductor device has a reverse voltage of at least 20 kV and an on-resistance of less than 20 mΩ · cm 2, and more preferably less than 10 mΩ · cm 2. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a bipolar transistor (BJT), an insulated gate bipolar transistor (IGBT), or a PIN diode.