A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices

摘要

We have experimentally verified a compact trench-assisted space-modulated junction termination extension (TSM-JTE) structure which has been designed for high voltage SiC devices. The proposed termination design introduces shallow trench structures into the conventional JTE implanted region, effectively creating a multi-zone JTE with a single implant, and hence greatly broadens the process window for a JTE termination. The TSM-JTE structure is compact and cost effective especially at higher voltages (≥ 10 kV) as it consumes less chip area while requiring only a single implant for the termination region. In this paper, 5 kV and 10 kV SiC PiN diodes have been fabricated and characterized.