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METHOD OF ETCHING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF PRODUCING GaN SUBSTRATE
METHOD OF ETCHING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF PRODUCING GaN SUBSTRATE
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机译:刻蚀第三族氮化物半导体的方法,第三族氮化物晶体的制造方法以及GaN基体的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of producing a group III nitride semiconductor crystal which enables production of group III nitride semiconductor crystals allowing easy peeling of a seed crystal and being excellent in crystallinity, a method of producing a GaN substrate and method of etching a group III nitride semiconductor.;SOLUTION: A method of etching a group III nitride semiconductor comprises forming a mask layer 140 on the gallium surface of a GaN substrate G10 serving as a growth substrate, forming a protective film PF on the nitrogen surface of the GaN substrate G10 and forming a plurality of concave parts X11 formed from the mask layer 140 to the GaN substrate G10 to obtain a seed crystal T10, etching the seed crystal T10 in an Na molten liquid to form a concave part X12 exposed with a facet surface so as to obtain a seed crystal T11, putting the seed crystal T11, together with a raw material, into a crucible and raising the pressure and temperature so that a GaN layer 150 grows in the lateral direction and the upward direction from the surface 144 of the mask layer 140.;COPYRIGHT: (C)2015,JPO&INPIT
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