The Dry Etching of Group III-Nitride Wide-Bandgap Semiconductors

摘要

Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sideivalls. Results obtained by standard methods are summarized, and the extent of concomitant ion-bombardment damage is assessed. A new low-damage technique-low-energy electron-enhanced etching-that avoids ion bombardment altogether is described, and early results for III-N materials are summarized. Etching issues critical in forming contacts and fabricating laser facets and mirrors are highlighted, and some prospects for future work are also identified.