首页> 外国专利> High purity cupric oxide fine powder and a method of manufacturing the same, and the copper ion supplying method of copper sulfate aqueous solution using a high-purity cupric oxide fine powder

High purity cupric oxide fine powder and a method of manufacturing the same, and the copper ion supplying method of copper sulfate aqueous solution using a high-purity cupric oxide fine powder

机译:高纯度氧化铜细粉及其制造方法,以及使用高纯度氧化铜细粉的硫酸铜水溶液的铜离子供给方法

摘要

PROBLEM TO BE SOLVED: To provide high purity cupric oxide fine powder with high copper oxide purity and high solubility into a plating liquid and a method for producing the cupric oxide powder and to provide a method for feeding copper ions to a copper sulfate aqueous solution used in the electroplating of copper using the high purity cupric oxide fine powder.;SOLUTION: In the method for producing the high purity cupric oxide fine powder, coarse cupric oxide powder obtained by heat treatment is subjected to grinding treatment. In the method, the high purity cupric oxide fine powder has a bulk density of at least 0.80 g/cm3, a tap density of ≥1.40 g/cm3 and ≤1.90 g/cm3, a specific surface area of at least 7 m2/g, an average particle size of 150 nm or below, and a CuO content of at least 98.5 wt.%.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:向电镀液中提供具有高氧化铜纯度和高溶解度的高纯度氧化铜细粉及其制备方法和提供将铜离子供给到所用硫酸铜水溶液中的方法解决方案:在高纯度氧化铜细粉的生产方法中,对通过热处理获得的粗氧化铜粉进行研磨处理。在该方法中,高纯度氧化铜细粉的堆积密度至少为0.80 g / cm 3 ,振实密度为≥ 1.40 g / cm 3 ,并且≤ 1.90 g / cm 3 ,比表面积至少为7 m 2 / g,平均粒径为150 nm或更低,CuO含量为至少98.5 wt。%.;版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP5622108B2

    专利类型

  • 公开/公告日2014-11-12

    原文格式PDF

  • 申请/专利权人 住友金属鉱山株式会社;

    申请/专利号JP20110006335

  • 发明设计人 河西 一雄;長南 武;

    申请日2011-01-14

  • 分类号C01G3/02;

  • 国家 JP

  • 入库时间 2022-08-21 15:28:59

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