首页>
外国专利>
SEMICONDUCTOR DEVICE WITH VERTICAL TRANSISTORS HAVING A SURROUNDING GATE AND A WORK-FUNCTION METAL AROUND AN UPPER SIDEWALL
SEMICONDUCTOR DEVICE WITH VERTICAL TRANSISTORS HAVING A SURROUNDING GATE AND A WORK-FUNCTION METAL AROUND AN UPPER SIDEWALL
展开▼
机译:带有垂直晶体管的半导体器件,其栅极围绕着上壁,工作金属环绕着上侧壁
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of manufacturing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A second step forms a gate insulating film around the pillar-shaped semiconductor layer, a gate electrode around the gate insulating film, and a gate line. A third step forms a first first-conductivity-type diffusion layer in an upper portion of the pillar-shaped semiconductor layer and a second first-conductivity-type diffusion layer in a lower portion of the pillar-shaped semiconductor layer and an upper portion of the fin-shaped semiconductor layer. A fourth step includes depositing, planarizing, and etching-back a first interlayer insulating film to expose an upper portion of the pillar-shaped semiconductor layer, depositing a first metal, and etching the metal to form a first sidewall around the upper portion of the pillar-shaped semiconductor layer.
展开▼