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Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar
Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar
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机译:垂直晶体管,在半导体柱周围具有介电隔离的功函数金属电极
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摘要
A semiconductor device includes a pillar-shaped semiconductor having an impurity concentration of 1017 cm−3 or less, a first insulator that surrounds the pillar-shaped semiconductor, a first metal that surrounds a portion of the first insulator at a first end of the pillar-shaped semiconductor, a second metal that surrounds a portion of the first insulator at the second end of the pillar-shaped semiconductor, a third metal that surrounds a portion of the first insulator in a region sandwiched between the first metal and the second metal, a second insulator formed between the first and third metals, a third insulator formed between the second and third metals, a fourth metal that connects the first metal and the one end, and a fifth metal that connects the second metal and the other end. The third metal has a work function of about 4.2 eV to about 5.0 eV.
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机译:半导体装置包括:杂质浓度为10 17 Sup> cm -3 Sup以下的柱状半导体,包围该柱状半导体的第一绝缘体,第一金属在柱状半导体的第一端处围绕第一绝缘体的一部分,在柱状半导体的第二端处围绕第一绝缘体的一部分的第二金属,在柱状半导体第二端围绕的第三金属夹在第一金属和第二金属之间的区域中的第一绝缘体,形成在第一和第三金属之间的第二绝缘体,形成在第二和第三金属之间的第三绝缘体,连接第一金属和一端的第四金属,第五金属连接第二金属和另一端。第三金属具有约4.2eV至约5.0eV的功函数。
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