A nonvolatile semiconductor memory device includes a first memory string including memory cell transistors and a first select transistor that are connected in series, a second memory string including memory cell transistors and a second select transistor that are connected in series, a bit line that is electrically connected to a first end of the first memory string and a first end of the second memory string, a first transistor having a gate that is connected to a second end of the first memory string, a source line that is electrically connected to a first end of the first transistor, and a second transistor having a gate that is connected to a second end of the second memory string, a first end that is electrically connected to a second end of the first transistor, and a second end that is electrically connected to the bit line.
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