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METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL, SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY
METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL, SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY
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机译:带有通道,源和漏区的金属氧化物薄膜晶体管,分别覆盖有不同的气体渗透率
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摘要
An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active layer comprising metal-oxide and formed on the substrate, and an impermeable layer over the source and drain regions of the annealed active layer, wherein the annealing resulting in the annealed active layer was performed with the impermeable layer over portions of the active layer corresponding to the source and drain regions, thereby resulting in a reduction of a resistivity of the source and drain regions of the annealed active layer relative to the active layer. In another aspect, a junctionless transistor is provided wherein the entire active area has a low resistivity based on annealing of an active layer including metal oxide while uncovered or at least partially covered with layers of various gas permeability under oxidizing or non-oxidizing conditions.
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