THIN FILM TRANSISTOR, A METHOD FOR FABRICATING A THIN FILM TRANSISTOR AND THE THIN FILM TRANSISTOR BY THEREOF, CAPABLE OF FORMING A SOURCE REGION, DRAIN REGION, AND A CHANNEL REGION THROUGH ONE TIME OF IMPURITY IMPLANTATION

摘要

PURPOSE: A thin film transistor, a method for fabricating a thin film transistor and the thin film transistor by thereof are provided to easily the width of a GOLDD(Gate Overlapped Lightly Doped Drain) region by controlling the width of a second gate electrode.;CONSTITUTION: In a thin film transistor, a method for fabricating a thin film transistor and the thin film transistor by thereof, a buffer layer(120) is formed on an insulating substrate(110). A semiconductor layer(130) is formed on the buffer layer. A gate insulating layer(140) is formed on the top side of the semiconductor layer. A first gate electrode(150) is formed in the upper part of the gate insulating layer. A second gate electrode(160) is formed to be contacted to the side wall of the first gate electrode.;COPYRIGHT KIPO 2011