ZnO Thin-Film Transistor with Boron-Implanted Source/Drain Regions

摘要

Because of the rapid diffusion of hydrogen in zinc oxide even at a relatively low temperature, zincoxide based thin-film transistors with hydrogen-doped source/drain regions suffer from degraded thermal stability. The use and effective of boron, a heavier and a more slowly-diffusing dopant, is systematically investigated as a replacement of hydrogen. Selfaligned, top-gated zinc-oxide thin-film transistors with source/drain regions doped with implanted boron is shown to be much more thermally stable, even when subjected to the relatively high temperature needed for the formation of a good-quality passivation layer.