Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes

摘要

Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface having a plurality of integrated circuits thereon involves forming an underfill material layer between and covering metal pillar/solder bump pairs of the integrated circuits. The method also involves forming a mask layer on the underfill material layer. The method also involves laser scribing mask layer and the underfill material layer to provide scribe lines exposing portions of the semiconductor wafer between the integrated circuits. The method also involves removing the mask layer. The method also involves, subsequent to removing the mask layer, plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the second insulating layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves, subsequent to the plasma etching, thinning but not removing the underfill material layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.