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Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench
Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench
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机译:在深沟槽中具有围绕N外延层的注入区的超结结构
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摘要
A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The inventive super junction can be used for MOSFET and Schottky rectifier.
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