Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench

摘要

A method for manufacturing a super junction trench MOSFET by growing a first epitaxial layer of a first conductivity type upon a heavily doped substrate layer of a first conductivity type; forming a deep trench mask covering a top surface of the first epitaxial layer; applying a trench mask to form a deep trench extending into the substrate layer by successively dry oxide etch and dry silicon etch; and carrying out angle ion implantations of the first conductivity type dopant and driving-in to form a first type column regions with column shape within the first epitaxial layer; and carrying out angle ion implantations of a second conductivity type dopant and diffusion to form a second type column regions with column shape adjacent to sidewalls of the deep trench, in parallel with and surrounding the first type column regions; and removing the hard mask.