机译:通过深沟槽填充外延生长开发SiC超结(SJ)器件
R&D Partnership for Future Power Electronics Technology, Japan,Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
R&D Partnership for Future Power Electronics Technology, Japan,Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
R&D Partnership for Future Power Electronics Technology, Japan,Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
R&D Partnership for Future Power Electronics Technology, Japan,Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
R&D Partnership for Future Power Electronics Technology, Japan,Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Japan;
super-junction; SJ; trench; trench-filling; epitaxial growth; scanning spreading resistance microscopy; ssrm; device simulation; TCAD;
机译:通过多外延生长开发SiC超结(SJ)器件
机译:Gibbs-Thomson效应对4H-SiC沟槽填充外延生长过程中铝掺杂的影响
机译:基于Gibbs-Thomson效应的连续流体逼近分析4H-SiC的沟槽填充外延生长
机译:深度沟槽填充外延生长的SiC超接线(SJ)装置的研制
机译:化学气相沉积SiC的表观生长及其在电子器件中的应用
机译:4H-SiC外延层器件在高分辨率辐射检测中的进展
机译:由具有外延生长层的CST方法和MESFET器件的CST方法和电学性质的P型4H-SiC(0001)的外延层生长