Barrier photodetector with no contact layer

摘要

A barrier-type photo-detector, such as an infra-red detector, is disclosed. The detector may include an absorber layer having predetermined majority and minority carrier types with corresponding energy bands; and a Barrier made, at least in part, of a semiconductor with a Barrier energy gap and corresponding conduction and valence bands, a first side of said Barrier adjacent a first side of said absorber layer. Metal contact regions may be disposed on the barrier layer, the metal contact regions delineating pixels where image data may be read out from the photo-detector; wherein the Barrier is configured so as to allow minority carrier current flow while blocking majority carrier current flow between the absorber layer and the metal contact regions.