Semiconductor laser used as a VCEL comprises a laser-active layer formed between barrier layers, contacts for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers

摘要

Semiconductor laser comprises a laser-active layer (4) formed between a first and second barrier layer (2, 5), connecting contacts (1, 6) for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers. The laser-active layer or an intermediate layer (3) formed on the laser-active layer is ferromagnetic to form a spin orientation of the charge carrier spin of a charge carrier type.