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Shallow PtSi-Si Schottky Barrier Contacts Formed by a Multilayer Metallization Technique

机译：由多层金属化技术形成的浅ptsi-si肖特基势垒接触

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作者
Tsaur, B. Y.; Mountain, R. W.; Lau, S. S.; Silversmith, D. J.; Hung, L. S.;
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年度 1980
页码 p.1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Schottky barrier devices; Annealing; Semiconductor devices; Silicon; Platinum; Vacuum deposition; Electric contacts; Reprints;

机译：肖特基势垒器件;退火;半导体器件;硅;铂;真空沉积;电触点;重印;

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专利

1. Shallow PtSi‐Si Schottky barrier contacts formed by a multilayer metallization technique [J] . Journal of Applied Physics . 1981,第8期

机译：通过多层金属化技术形成的浅PtSi-Si肖特基势垒接触
2. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS 2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [J] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, Scientific reports. . 2018,第1期

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS 2宽带探测器中的超高光响应性
3. Schottky barrier characteristics of ternary silicide Co_(1-x)Ni_xSi_2 on n-Si(100) contacts formed by solid phase reaction of multilayer [J] . Shiyang Zhu, R.L. Van Meirhaeghe, S. Forment, Solid-State Electronics . 2004,第7期

机译：多层固相反应在n-Si（100）接触上形成三元硅化物Co_（1-x）Ni_xSi_2的肖特基势垒特性
4. Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs [C] . Eliana Kaminska, Iwona Pasternak, Michal A. Borysiewicz, Advanced materials for applications in extreme environments . 2010

机译：用于InAlN / GaN HEMT的肖特基和欧姆接触金属化的多层防扩散势垒方案
5. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. [D] . Sarpatwari, Karthik. 2009

机译：理解金属/半导体肖特基接触的电性能：块体和纳米级结构中势垒不均匀性和几何形状的影响。
6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS2宽带探测器中的超高光响应性
7. Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography [O] . Xiaorui Zheng, Annalisa Calò, Edoardo Albisetti, 2019

机译：在单层MOS2上的图案化金属触点，使用热纳米光刻消失肖特基障碍
8. Hydrogen Annealing of PtSi-Si Schottky Barrier Contacts [R] . Tsaur, B. Y., Mattia, J. P., Chen, C. K. 1990

机译：ptsi-si肖特基势垒接触的氢退火

Shallow PtSi-Si Schottky Barrier Contacts Formed by a Multilayer Metallization Technique

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