Multilayer contact system comprises a contact metallization deposited on a semiconductor substrate, a barrier layer deposited on the metallization, a bond metallization, and a protective metallization made from composite material

摘要

Multilayer contact system comprises a contact metallization deposited on a semiconductor substrate; a barrier layer deposited on the metallization to prevent interdiffusion processes; a bond metallization with a bond pad deposited on the barrier layer; and a protective metallization made from composite material of chromium and precious metal or a chromium-precious metal alloy. Preferred Features: The bond pad is laterally displaced against the vertical contact structure. The region is protected with a passivation outside of the bond pads. The contact metallization is deposited in a contact structure etched into a SiO2 layer.