MEMORY DEVICE WITH NON-VOLATILE MEMORY ARRAY INCLUDING ONE FINFET ONE MEMRISTOR (1F1M)

摘要

One FinFET One Memristor i.e.1F1M is memory element that is used to store not only binary values but also decimal numbers with multiple bits. This is a novel approach of forming high density array that can be used for storing information from small gadgets mobile, internal storage, hard disks to large like satellite, radars and various military applications. Improvement in computer competence in the last few years had been closely associated with reduction of CMOS technology. Electrical interconnect has become both a performance barrier and one of the major source of power dissipation that is recently the most significant factor which act as a major barrier for technology growth. The main motives of designing 1F1M memory element is to create very high density storing device with very low power consumption, low leakage and very less delay in accessing data. Additionally these 1F1M devices are CMOS compatible also. So if needed, they can be employed with CMOS technology also.