A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

摘要

Memristors that display the behaviors of a diversity of logic devices have attracted enormous scientific and industrial interest from researchers striving to improve information storage and processing techniques. Indeed, memristor devices are one of the most promising candidate approaches to next-generation memory technologies because they operate at low powers and offer high-density integration and high-speed access time. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of a variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. The introduction of these new stimuli can expand the applicability of memristors to a variety of environments. Among these signal controlling factor choices, the illumination conditions are particularly attractive because photon signals are easier to apply over long distances than electrical signals, and photon signals can efficiently manage the interactions between circuit devices without disruption by signal interference. The wave characteristics of photons allow for the facile manipulation of the light ray path to enable incident light angle control over the memristive switching. Conversely, the device orientation with respect to the photon source can determine the memristive switching properties.