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Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells
Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells
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机译:具有串行连接的非易失性可逆电阻切换存储单元的非易失性存储系统
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摘要
A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.
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