Resistance-switching properties of Bi-doped SrTiO3 films for non-volatile memory applications with different device structures

摘要

SrTiO3 and Bi-doped SrTiO3 films were fabricated with different device structures using the sol-gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. SrTiO3 and Sr0.92Bi0.08TiO3 films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the Sr0.92Bi0.08TiO3 films grown on Si is slightly larger than those of the SrTiO3 films grown on Si and the Sr0.92Bi0.08TiO3 films grown on Pt. The SrTiO3 or Sr0.92Bi0.08TiO3 films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the Ag/ Sr0.92Bi0.08TiO3/ Si device possesses the highest RHRS/ RLRS of 105 and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the RHRS/ RLRS of the SrTiO3 films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the Sr0.92Bi0.08TiO(3) films.