MULTI-STEP PLAMSA ETCHING METHOD AND INSB SUBSTRATE FOR INSB

摘要

A dry etching method of InSb of the present invention comprises the steps of: using argon gas and nitrogen gas as etching gas, and converting the etching gas into plasma to etch by ions and radicals in the plasma; and gradually proceeding with an additional etching process by a mixture of argon and nitrogen gases, and a final etching process using the nitrogen gas, after fast-etching using the argon gas. Therefore, InSb having an excellent etching property to display roughness of a flat surface and low fault occurrence together with a fast etching speed, is provided, which is usefully utilized in a semiconductor device to require a mid infrared photodetector and a high speed and low power, and the like.