Multi-step plamsa etching method and InSb substrate for InSb

摘要

The dry etching method of the indium antimonide (InSb) of the present invention includes the steps of using argon gas and nitrogen gas as an etching gas, etching the etching gas with ions and radicals in the plasma, Followed by additional etching by a mixed gas of argon and nitrogen, followed by a final etching process using nitrogen gas, after the high-speed etching. From this, it is possible to provide an indium antimonide having a flat surface roughness and an excellent etching property showing a low defect generation together with a rapid etching rate, thereby making it possible to provide an infrared photodetector and a semiconductor device requiring high speed and low power & Low power consumption device).