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GRAPHENE FIELD EFFECT TRANSISTOR WITH DIELECTRICS AND GATE ELECTRODES HAVING STABLE BEHAVIORS DESPITE HIGH STRAINS, AND MANUFACTURING METHOD OF THE SAME
GRAPHENE FIELD EFFECT TRANSISTOR WITH DIELECTRICS AND GATE ELECTRODES HAVING STABLE BEHAVIORS DESPITE HIGH STRAINS, AND MANUFACTURING METHOD OF THE SAME
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机译:尽管具有高应变,但具有稳定行为的具有导电和栅电极的石墨烯场效应晶体管及其制造方法
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摘要
The present invention relates to a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains and a method for manufacturing the same. According to an embodiment of the present invention, the method of manufacturing a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains includes a step of preparing a monolithically patterned graphene layer; a step of forming an insulating layer; and a step of forming a gate electrode. [Reference numerals] (AA) Patterned graphene; (BB) Rubber; (CC) Aerosol jet printing; (DD) Nozzle; (EE) Ion gel printing; (FF) Ethanol; (GG,HH) Stretch(transformation); (II) PEDOT:PSS printing; (JJ) Hexane evaporation
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