Method of manufacturing a field effect transistor having a high dielectric gate insulating film and a metal gate electrode

摘要

PPROBLEM TO BE SOLVED: To improve electric characteristics and device performance of a metal oxide film semiconductor field effect transistor (MOSFET) by improving interface characteristics between a high-K dielectric film and a metallic gate. PSOLUTION: A method of improving an interface between a high-K dielectric film and a metallic gate in manufacturing the MOSFET by depositing the metallic gate on the high-K dielectric film includes an annealing step of annealing a substrate with the high-K dielectric film deposited thereon in a heat annealing module, and a depositing step of depositing a metallic gate material on the annealed substrate in a metallic gate deposition module. Consequently, the annealing step and the depositing step successively take place without breaking a vacuum. PCOPYRIGHT: (C)2006,JPO&NCIPI