Composition for electrodeposition of metals containing additives TO FILL UP BOTTOM vias in silicon and interconnect ELEMENTS

摘要

1. A composition comprising a source of metal ions and at least one polyaminoamide, wherein the polyaminoamide containing amide and amine functional groups in the polymer backbone and at least one aromatic moiety attached to or located in said main polymer tsepi.2. Composition according to Claim. 1, in which at least one aromatic moiety is located between the two nitrogen atoms in the polymer tsepi.3. Composition according to Claim. 1 in which a polyaminoamide comprises a structural unit represented by the formula Iili derivatives thereof obtained by complete or partial protonation, N-functionalization or N-quaternization, wherein A represents a diradical selected WPI is a diradical selected from a chemical bond iliD is a chemical bond or a divalent group selected izDvybran, for each repeating unit from 1 to p independently from a chemical bond or a divalent group selected from a saturated or unsaturated C Sorganicheskogo radical, D, Dvybrany independently from straight or branched C Salkandiila which may optionally be substituted by heteroatoms selected from N and O, Dvybran from straight or branched C Salkandiila C-Sarilnogo or geteroarilnogodiradikala C-Sarilalkandiila C-Sgeteroarilalkandiila, Dvybran from straight or branched C-C-alkanediyl which is optionally may be substituted by heteroatoms, R c is selected for each repeating unit from 1 to n independently from H, CC-alkyl and S-aryl or C-C-C-heteroaryl, which can optionally be substituted by hydroxyl, al