COATING LIQUID FOR FORMING THIN METAL OXIDE FILM, THIN METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING FIELD-EFFECT TRANSISTOR

摘要

FIELD: chemistry.;SUBSTANCE: invention relates to thin metal-oxide films used to make a field-effect transistor. A coating liquid for forming a thin metal oxide film includes an inorganic indium compound, at least one of an inorganic magnesium compound and an inorganic zinc compound, glycolic ether and a diol, wherein the diol is selected from at least one of diethylene glycol, 1,2-propanediol and 1,3-butanediol.;EFFECT: invention enables to obtain a thin-film metal oxide coating with the required resistivity using a simple method, a large area, the required shape and with high accuracy.;12 cl, 10 dwg, 4 tbl