WAFER SUPPORT AND MANUFACTURING DEVICE OF SiC EPITAXIAL WAFER INCLUDING THE SAME, AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a wafer support, a manufacturing device, and a manufacturing method, capable of efficiently and sufficiently reducing epitaxial crowning and also capable of making a carrier concentration in a wafer surface uniform.;SOLUTION: A wafer support of the present invention is a wafer support used in a chemical vapor deposition device that grows an epitaxial film on a principal surface of a wafer by a chemical vapor deposition method. The wafer support has: a wafer-mounting surface on the top face of which a substrate is mounted; and a wafer-supporting part that rises up so as to surround the periphery of a wafer to be mounted. The height from a portion farthest from the wafer-mounting surface on the top surface of the wafer-support part on a reaction space side to the principal surface of the wafer mounted on the wafer-mounting surface is 1 mm or more. At least a part of the wafer-support part is formed of a material containing a part of constituent elements of the epitaxial film.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT