Gate with self-aligning ledge of enhancement mode GaN transistor

摘要

An enhancement mode GaN transistor having a small gate leakage current between a gate contact and a 2DEG region, and a method of producing the same. The enhancement mode GaN transistor has a GaN layer and a barrier layer disposed on the GaN layer, wherein a 2DEG region is formed between the GaN layer and the barrier layer, and a source contact and a drain contact are arranged on the barrier layer Has been done. The GaN transistor further includes a P-type gate material formed on the barrier layer and between the source contact and the drain contact, and a gate metal disposed on the P-type gate material, the P-type material being in contact with the source contact And a set of self-aligned ledges extending toward the drain contact.