How to stabilize the post-etch interface and minimize cue time issues before the next processing step

摘要

An etching method using a low temperature etching process of a dielectric barrier layer disposed on a substrate and a subsequent interface protection layer deposition process is provided. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes transferring the substrate on which the dielectric barrier layer is disposed into an etching process chamber and performing a process on the dielectric barrier layer. Remotely etching a plasma into an etchant gas supplied into an etching process chamber to etch a processed dielectric barrier layer disposed on the substrate; removing the dielectric barrier layer from the substrate Plasma sintering the dielectric barrier layer to form an interface protective layer after the dielectric barrier is removed from the substrate. [Selection] Figure 4E