Methods are provided for etching a dielectric barrier layer disposed on a substrate using a low temperature etch process in conjunction with a subsequent interfacial protection layer deposition process. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes: transferring a substrate over which a dielectric barrier layer is disposed into an etch process chamber; Performing a treatment process on the dielectric barrier layer; Remotely generating a plasma in an etch gas mixture supplied into an etch processing chamber to etch the processed dielectric barrier layer disposed on the substrate; Plasma annealing the dielectric barrier layer to remove the dielectric barrier layer from the substrate; And forming an interfacial protective layer after the dielectric barrier is removed from the substrate.
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