首页>
外国专利>
How to stabilize the post-etch interface and minimize cue time issues before the next processing step
How to stabilize the post-etch interface and minimize cue time issues before the next processing step
展开▼
机译:在下一个处理步骤之前,如何稳定蚀刻后界面并使提示时间问题最小化
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods for etching a dielectric barrier layer disposed on the substrate using a low temperature etching process along with a subsequent interface protection layer deposition process are provided. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes transferring a substrate having a dielectric barrier layer disposed thereon into an etching processing chamber, performing a treatment process on the dielectric barrier layer, remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the treated dielectric barrier layer disposed on the substrate, plasma annealing the dielectric barrier layer to remove the dielectric barrier layer from the substrate, and forming an interface protection layer after the dielectric barrier is removed from the substrate.
展开▼