Dry etching apparatus, a dry etching method, photomask manufacturing apparatus and photomask manufacturing method

摘要

PROBLEM TO BE SOLVED: To provide a dry etching device capable of performing an etching process with reduced global loading by freely varying a plasma density in an arbitrary area, a dry etching method, a photomask manufacturing device, and a photomask manufacturing method.;SOLUTION: A dry etching device 20 etches a material to be etched. An arithmetic mechanism 34 stores therein pattern data of the material to be etched and calculates a pattern density. A plasma control mechanism comprising a magnet 30 etc. varies a plasma density of the material to be etched when performing the etching process.;COPYRIGHT: (C)2013,JPO&INPIT