Semiconductor laminated body and method for manufacturing the same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer

摘要

In 1st this invention, the manufacturing method of the semiconductor laminated body by which the silicon layer with few surface unevenness | corrugations and high continuity was formed on the base material is provided. The method of the first present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate contains (a) a dispersion medium and silicon particles dispersed in the dispersion medium. A step of applying the silicon particle dispersion onto the substrate 10 to form the silicon particle dispersion layer 1; and (b) drying the silicon particle dispersion layer 1 to form an unsintered silicon particle layer 2. A step, (c) a step of laminating the light-transmitting layer 3 on the unsintered silicon particle layer, and (d) irradiating the unsintered silicon particle layer 2 with light through the light-transmitting layer 3, It includes a step of sintering the silicon particles constituting the silicon particle layer 2 to thereby form the sintered silicon particle layer 5.