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METHOD FOR INCREASING PATTERN DENSITY IN SELF-ALIGNED PATTERNING SCHEMES WITHOUT USING HARD MASKS
METHOD FOR INCREASING PATTERN DENSITY IN SELF-ALIGNED PATTERNING SCHEMES WITHOUT USING HARD MASKS
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机译:不使用硬掩模增加自对准图案方案中图案密度的方法
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摘要
Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: providing a substrate having a patterned resist layer and an underlying layer comprising a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist hardening process; performing a first conformal spacer deposition using an atomic layer deposition technique with an oxide, performing a spacer first reactive ion etch process and a first pull process on the first conformal layer, performing a second conformal spacer deposition using titanium oxide; performing a second spacer RIE process and a second pull process, generating a second spacer pattern; and transferring the second spacer pattern into the target layer, wherein targets include patterning uniformity, pulldown of structures, slimming of structures, aspect ratio of structures, and line width roughness.
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