METHOD OF INCREASING PATTERN DENSITY IN SELF-ALIGNED PATTERNING SCHEMES WITHOUT USING HARD MASKS

摘要

There is provided a method of increasing a pattern density of a structure using an integrating scheme which performs a pitch splitting at a resist level without using a rigid mandrel. The method according to the present invention comprises the steps of: providing a substrate having a patterned resist layer and a lower layer, wherein the lower layer includes a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist curing process; performing deposition of a first conformal spacer by using an atomic layer deposition technology using an oxide; performing a first reactive ion etching (RIE) process and a first pull process of a spacer on the first conformal conformal layer; performing a second conformal spacer deposition by using a titanium oxide; generating a second spacer pattern by performing a second spacer RIE process and a second pull process; and transferring the second spacer pattern onto the target layer. An objective of the present invention includes patterning uniformity, a pull-down of a structure, thinning of the structure, an aspect ratio of the structure, a linewidth roughness, etc.;COPYRIGHT KIPO 2016