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METHOD OF FORMING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STRUCTURE WITH N-TYPE AND P-TYPE FIELD EFFECT TRANSISTORS HAVING SYMMETRIC SOURCE/DRAIN JUNCTIONS AND OPTIONAL DUAL SILICIDES
METHOD OF FORMING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STRUCTURE WITH N-TYPE AND P-TYPE FIELD EFFECT TRANSISTORS HAVING SYMMETRIC SOURCE/DRAIN JUNCTIONS AND OPTIONAL DUAL SILICIDES
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机译:具有对称源/漏键和可选双硅化物的N型和P型场效应晶体管的互补金属氧化物半导体结构的形成方法
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摘要
In a method of forming a semiconductor structure, different sections of a dielectric layer are etched at different stages during processing to form a first gate sidewall spacer for a first FET (e.g., a NFET) and a second gate sidewall spacer for a second FET (e.g., a PFET) such that the first and second gate sidewall spacers are symmetric. Raised source/drain regions for the first FET are formed immediately following first gate sidewall spacer formation and raised source/drain regions for the second FET are formed immediately following second gate sidewall spacer formation. Since the gate sidewall spacers of the two FETs are symmetric, the source/drain junctions of the two FETs will also be symmetric. Additionally, due to an etch stop layer formed on the raised source/drain regions of the first FET, but not the second FET, different metal silicides on the raised source/drain regions of the different FETs.
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