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DEPOSITION OF CONFORMAL FILMS BY ATOMIC LAYER DEPOSITION AND ATOMIC LAYER ETCH
DEPOSITION OF CONFORMAL FILMS BY ATOMIC LAYER DEPOSITION AND ATOMIC LAYER ETCH
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机译:通过原子层沉积和原子层刻蚀来沉积保形膜
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摘要
Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.
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