首页>
外国专利>
Atomic Layer Deposition Method Using Source Precursor Transformed by Hydrogen Radical Exposure
Atomic Layer Deposition Method Using Source Precursor Transformed by Hydrogen Radical Exposure
展开▼
机译:氢自由基辐照转化源前驱体的原子层沉积方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A film of source precursor molecules injected onto a substrate are reacted with hydrogen radicals, such as those produced in a hydrogen plasma, prior to reaction with a reactant precursor. This replaces the functional groups of the reactant precursor (e.g., methyl groups in alkyl groups) with hydrogen, thus reducing the overall size of the source precursor molecule. An additional cycle of source precursor molecules are injected onto the substrate, some of which occupy portions of the substrate surface left unoccupied by the now absent methyl functional groups. This increases the density of source precursor molecules (i.e., reaction sites) on the substrate. The reactivity of the source precursor molecules exposed to hydrogen radicals (or an H2 plasma) is also increased.
展开▼