Atomic Layer Deposition of Al2O3 on GaSb Using In Situ Hydrogen Plasma Exposure.

摘要

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 deg C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbOx, decreased Sb, and increased GaOx content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sn-based devices.