REACTOR FOR ATOMIC LAYER DEPOSITION (ALD), APPLICATION TO ENCAPSULATING AN OLED DEVICE BY TRANSPARENT AL2O3 LAYER DEPOSITION.

摘要

Reactor for the deposition of atomic layer (ALD), application to the encapsulation of an OLED device by deposition of transparent layer in Al O. The present invention relates to a reactor (1) for the deposition of atomic layer (ALD) comprising: - a reaction chamber (10) comprising a sole (100) and defined internally by surfaces, - at least one inlet orifice (11) and at least one outlet orifice (12) each opening into one of the surfaces delimitation; It further comprises within it, at least one open wall in at least one orifice, the open wall extending around the hearth and at least a major part of the height between the lower surface and the upper surface, at least an orifice of at least one of the open walls not being opposite the inlet orifice so as to form gaseous precursor circulation baffles from each inlet orifice (11) to the sole (100 ).