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Capacitance reduction for advanced technology nodes
Capacitance reduction for advanced technology nodes
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机译:减少先进技术节点的电容
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摘要
After forming source/drain contact trenches to expose source/drain regions, contact liner material layer portions are formed on sidewalls and bottom surfaces of the source/drain contact trenches. Contact material layer portions are then formed over the contact liner material layer portions to fill in the source/drain contact trenches. At least portions of the contact material layer portions and the contact liner material layer portions present on sidewalls of the source/drain contact trenches are removed to provide source/drain contacts with reduced contact capacitance.
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