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CONTACT RESISTANCE REDUCTION FOR ADVANCED TECHNOLOGY NODES

机译:先进技术节点的接触电阻降低

摘要

A source/drain contact includes a first portion arranged on a substrate and extending between a first gate and a second gate; a second portion arranged on the first portion and extending over the first gate and the second gate, the second portion including a partially recessed liner and a metal disposed on the partially recessed liner, and the partially recessed liner arranged on an endwall of the second portion and in contact with the first portion; and an oxide disposed around the second portion and on the first gate and the second gate.
机译:源极/漏极触点包括:第一部分,其布置在基板上并在第一栅极和第二栅极之间延伸;第一部分和第二部分在第一栅极和第二栅极之间延伸。第二部分布置在第一部分上并在第一浇口和第二浇口上方延伸,第二部分包括部分凹入的衬里和布置在部分凹入的衬里上的金属,部分凹入的衬里布置在第二部分的端壁上并与第一部分接触;氧化物设置在第二部分周围并在第一栅极和第二栅极上。

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