Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies

摘要

This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization(DTCO)of advanced semiconductor memories.After reviewing the DTCO approach to semiconductor devices scaling,we introduce a multi-stage simulation flow to study the deviceto-circuit performance of advanced memory technologies in presence of statistical and process variability.We present a DRAM example to highlight the DTCO enablement for both memory and periphery.Our analysis demonstrates how the evaluation of different possible technology improvements and design combinations can be carried out to maximize the benefits of continuous technology scaling for a given set of manufacturing equipment.