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Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of forming a VMGFET
Vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer and method of forming a VMGFET
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机译:绝缘体上硅(SOI)晶片上的垂直可移动栅场效应晶体管(VMGFET)和形成VMGFET的方法
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摘要
Methods for forming a vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer are described. The methods include providing a process of making VMGFET devices without critical alignment of masks between sequential etch and diffusion steps. The oxide layer of the SOI wafer is used for a self-limiting etch stop layer and for a sacrificial layer to form an insulating layer between a gate electrode and a substrate. The proper location of the gate electrode with respect to the source and drain junctions is insured by using a silicon gate structure as a mask layer for the diffusion process for defining the source and drain junctions.
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