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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

机译：绝缘体中硅片铁电双栅垂直隧道场效应晶体管中的单一事件瞬态效应

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Guoliang Tian; Jinshun Bi; Gaobo Xu; Kai Xi; Xueqin Yang; Majumdar Sandip; Huaxiang Yin; Qiuxia Xu; Wenwu Wang;
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1. TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors [J] . Qianqiong Wang, Hongxia Liu, Shulong Wang, IEEE Transactions on Nuclear Science . 2018,第8期

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2. Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double-gate silicon-on-insulator metaloxide-semiconductor field-effect transistors [J] . Sharma Rajiv, Pandey Sujata, Jain Shail Bala International journal of numerical modelling . 2014,第1期

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3. Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential [J] . M. Jagadesh Kumar, G. Venkateshwar Reddy Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第9A期

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4. Investigation of single-event-transient effect in floating-gate junctionless double-gate field-effect-transistor [C] . Avashesh Dubey, Mridula Gupta, Rakhi Narang, IEEE Nanotechnology Materials and Devices Conference . 2019

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5. III-V vertical tunnel field effect transistors with tunneling aligned with the gate field [D] . Zhou, Guangle. 2012

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7. Ferroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructures [O] . Yuan S, Yang Z, Xie C, 2016

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Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

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